The demand for advanced memory chips which offer high performance and high density is undoubtedly soaring high as companies are carving out feature-rich smartphones and tablet PCs. Keeping this in mind, Samsung has announced the development of 1Gb mobile DRAM with a wide I/O interface using 50 nanometer class process technology.
The newest offering boasts of its ability to transfer data at 12.8GB per second, thereby augmenting the bandwidth of mobile DDR DRAM and lowering power consumption. The bandwidth is touted to be four times than that of LPDDR2 DRAM. Samsung’s wide I/O DRAM utilizes 512 pins for data input and output.
“Following the development of 4Gb LPDDR2 DRAM last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products,†commented Byungse So, senior vice president, memory product planning and application engineering at Samsung Electronics. “We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry.â€
The company is also expected to roll out 20nm-class 4Gb wide I/O mobile DRAM in 2013. iSuppli has reported that mobile DRAM’s percentage of total annual DRAM shipments are estimated to increase from around 11.1 percent in 2010 to 16.5 percent in 2014.
Samsung’s 1Gb mobile DRAM with a wide I/O interface is anticipated to render enhanced performance.
