Memory capabilities are one of the prime factors of the modish devices making their way into the market. Samsung has now announced the 30-nanometer-class DRAM which has completed customer evaluations in two GB densities. The DDR3 SDRAM is said to be the predominant main memory this quarter and Samsung’s new innovation will further elevate performance and productivity.
On applying the 30nm-class process to DDR3 mass production, the productivity increases by 60 percent when compared to 40nm-class DDR3. This also elevates the production cost-efficiency compared to DRAM with 50nm to 60nm-class technology.
“Our 30nm-class process technology will provide the most advanced low-power DDR3 available today and therein the most efficient DRAM solutions anywhere for the introduction of consumer electronics devices and server systems.â€
“Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market,†said Soo-In Cho, president, Memory Division, Samsung Electronics.
The 30nm-class 2GB, Green DRAM minimizes power consumption by up to 30 percent compared to 50nm-class DRAM. On using a 4-Gigabyte 30nm module with a new-generation notebook, it consumes only three watts per hour which accounts to about three percent of total power consumed by a notebook.
The 30nm-class DDR3 is expected to be mass produced during the second half of this year.
