With an aim to create new levels in the field of NAND technology, the Intel 20nm 128GB MLC NAND device was recently introduced by Intel and Micron Technology. The companies claim that this is the first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device in the market.
Besides the introduction of the NAND device, the mass production of their 64GB 20nm NAND has also begun. The high capacity 20nm NAND device has been engineered by the two companies’ joint-development venture, IM Flash Technologies (IMFT). It facilitates a Tb of data storage in a form factor that is as tiny as a fingertip by utilizing only eight die.
“It is gratifying to see the continued NAND leadership from the Intel-Micron joint development with yet more firsts as our manufacturing teams deliver these high-density, low-cost, compute-quality 20nm NAND devices. Through the utilization of planar cell structure and Hi-K/Metal gate stack, IMFT continues to advance the technological capabilities of our NAND flash memory solutions to enable exciting new products, services and form factors,†cited Rob Crooke, Intel vice president and general manager of Intel’s Non-Volatile Memory Solutions Group.
This 128GB offering features high-speed ONFI 3.0 and offers a speed of 333 megatransfers per second (MT/s). It further touts to deliver a cost-efficient solid-state storage option, apt for the numerous slim electronic devices that rule the roost today. This includes tablets, smartphones and high-capacity solid-state drives.
The mass production of the 20nm 64GB NAND device by Intel and Micron is set to begin this month while samples of the Intel 20nm 128GB MLC NAND device will be available in January 2012, with mass production of the same being dated for the first half of next year.
